Previous publications

1. Mongillo, M., Spathis, P., Katsaros, G., De Franceschi, S., Gentile, P., Rurali, R., Cartoixa, X. (2013): PtSi Clustering in Silicon Probed by Transport Spectroscopy, Phys. Rev. X 3, 041025. DOI: 10.1103/PhysRevX.3.041025

2. Ares, N., Katsaros, G., Golovach, V. N., Zhang, J. J., Glazman, L. I., Schmidt, O. G. and De Franceschi, S. (2013) : SiGe quantum dots for fast hole spin Rabi oscillations , Appl. Phys. Lett. 103, 263113. DOI: 10.1063/1.4858959

3. Ares, N., Golovach, V. N., Katsaros, G., Stoffel, M., Fournel, F., Glazman, L. I., Schmidt, O. G. and De Franceschi, S. (2013): On the nature of electrically tunable hole g-factors in quantum dots, Phys. Rev. Lett. 110, 046602. DOI:10.1103/PhysRevLett.110.046602.

4. Lee, E. J. H., Jiang, X., Aguado, R., Katsaros, G., Lieber C. M. and De Franceschi, S. (2012): Zero-bias anomaly in a nanowire quantum dot coupled to superconductors, Phys. Rev. Lett. 109, 186802. DOI: 10.1103/PhysRevLett.109.186802

5. Zhang, J. J., Katsaros, G., Montalenti, F., Scopece, D., Rezaev, R. O., Mickel, C., Rellinghaus, B., Miglio, L., De Franceschi, S., Rastelli, A. and Schmidt, O. G. (2012): Monolithic growth of ultra-thin Ge nanowires on Si(001) , Phys. Rev. Lett. 109, 085502. DOI: 10.1103/PhysRevLett.109.085502

6. Mongillo, M., Spathis, P., Katsaros G., Gentile, P. and De Franceschi, S. (2012): Multifunctional Devices and Logic Gates With Undoped Silicon Nanowires, Nano Letters 12, 3074-3079. DOI: 10.1021/nl300930m

7. Katsaros, G., Golovach, V. N., Spathis, P., Ares, N., Fournel, F., Schmidt, O. G., Glazman, L. I. and De Franceschi S. (2011): Observation of spin selective tunnelling in SiGe nanocrystals, Phys. Rev. Lett. 107, 246601. DOI: 10.1103/PhysRevLett.107.246601

8. Mongillo, M., Spathis, P., Katsaros, G., Gentile, P., Sanquer, M. and De Franceschi, S. (2011): Electrically driven silicidation of Silicon Nanowires, ACS Nano 5, 7117-7123. DOI: 10.1021/nn202524j

9. Songmuang, R., Katsaros, G., Monroy, E., Spathis, P., Bourgeral, C., Mongillo, M. and De Franceschi, S. (2010): Quantum transport in GaN/AlN double-barrier heterostructure nanowires, Nano letters 10, 3545-3550. DOI: 10.1021/nl1017578

10. Katsaros, G., Spathis, P., Stoffel, M., Fournel, F., Mongillo, M., Bouchiat, V., Lefloch, F., Rastelli, A., Schmidt O. G. and De Franceschi, S. (2010): Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon, Nature Nanotechnology 5, 458-464. DOI: 10.1038/NNANO.2010.84

11. Rastelli, A., Stoffel, M., Malachias, A., Merdzhanova, T., Katsaros, G., Kern, K., Metzger, T. H. and Schmidt, O. G. (2008): Three-dimensional composition profiles of single quantum dots determined by scanning-probe-microscopy-based nanotomography, Nano Letters 8, 1404-1409. DOI: 10.1021/nl080290y

12. Katsaros, G., Tersoff, J., Stoffel, M., Rastelli, A., Acosta-Diaz, P., Kar, G. S., Costantini, G., Schmidt, O. G. and Kern, K. (2008): Positioning of strained islands by interaction with surface nanogrooves, Phys. Rev. Lett. 101, 096103. DOI: 10.1103/PhysRevLett.101.096103

13. Katsaros, G., Stoffel, M., Rastelli, A., Tersoff, J., Schmidt, O. G. and Kern, K. (2007): Revealing the three-dimensional composition of buried SiGe/Si(001) islands, Appl. Phys. Lett. 91, 013112. DOI: 10.1063/1.2752730

14. Katsaros, G., Rastelli, A., Stoffel, M., Tersoff, J., Müller, E., Costantini, G., von Känel, H., Schmidt, O. G. and Kern, K. (2006): Evolution of buried semiconductor nanostructures and origin of stepped surface mounds during capping, Appl. Phys. Lett. 89, 253105. DOI: 10.1063/1.2405876

15. Costantini, G., Rastelli, A., Manzano, C., Acosta-Diaz, P., Songmuang, R., Katsaros, G., Schmidt, O. G. and Kern, K. (2006): Interplay between thermodynamics and kinetics in the capping of InAs/GaAs(001) quantum dots, Phys. Rev. Lett. 96, 226106. DOI: 10.1103/PhysRevLett.96.226106

16. Katsaros, G., Rastelli, A., Stoffel, M., Isella, G., von Känel, H.,Bittner, A. M., Tersoff, J., Denker, U., Schmidt, O. G., Costantini, G. and Kern, K. (2006): Investigating the lateral motion of SiGe islands by selective chemical etching, Surface Science 600, 2608. DOI: 10.1016/j.susc.2006.04.027

17. Zhong, Z., Katsaros, G., Stoffel, M., Costantini, G., Kern, K. and Schmidt, O. G. (2005): Periodic pillar structures by etching of multiplayer GeSi/Si islands, Appl. Phys. Lett. 87, 263102. DOI: 10.1063/1.2150278

18. Denker, U., Rastelli, A., Stoffel, M., Tersoff, J., Katsaros, G., Costantini, G., Kern, K., Jin-Phillipp, N. Y., Jesson, D. E. and Schmidt, O. G. (2005): Lateral motion of SiGe islands driven by surface-mediated alloying, Phys. Rev. Lett. 94, 216103. DOI: 10.1103/PhysRevLett.94.216103

19. Katsaros, G., Costantini, G., Stoffel, M., Esteban, R., Bittner, A. M., Rastelli, A., Denker, U., Schmidt, O. G. and Kern, K. (2005): Kinetic origin of island intermixing during the growth of Ge on Si(001), Phys. Rev. B 72, 195320. DOI: 10.1103/PhysRevB.72.195320

20. Stergiopoulos, T., Arabatzis, I. M., Katsaros, G. and Falaras, P. (2002): Binary polyethylene-titania solid-state redox electrolyte for highly efficient nanocrystalline TiO2 photoelectrochemical cells, Nano letters 2, 1259. DOI: 10.1021/nl025798u

21. Katsaros, G., Stergiopoulos, T., Arabatzis, I. M., Papadokostaki, K. G. and Falaras, P. (2002): A solvent-free composite polymer/inorganic oxide electrolyte for high efficient solid-state dye-sensitized solar cells, Journal of Photochemistry and Photobiology A 149, 191. DOI: 10.1016/S1010-6030(02)00027-8

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